Справочник MOSFET. IPT60R028G7

 

IPT60R028G7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPT60R028G7
   Маркировка: 60R028G7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 391 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 123 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 99 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: HSOF-8

 Аналог (замена) для IPT60R028G7

 

 

IPT60R028G7 Datasheet (PDF)

 ..1. Size:992K  infineon
 ipt60r028g7.pdf

IPT60R028G7 IPT60R028G7

IPT60R028G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go

 6.1. Size:1094K  infineon
 ipt60r022s7.pdf

IPT60R028G7 IPT60R028G7

IPT60R022S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R022S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r

 7.1. Size:1085K  infineon
 ipt60r040s7.pdf

IPT60R028G7 IPT60R028G7

IPT60R040S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R040S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r

 7.2. Size:997K  infineon
 ipt60r050g7.pdf

IPT60R028G7 IPT60R028G7

IPT60R050G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go

 7.3. Size:1077K  infineon
 ipt60r065s7.pdf

IPT60R028G7 IPT60R028G7

IPT60R065S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R065S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r

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