IPU80R2K4P7 Todos los transistores

 

IPU80R2K4P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPU80R2K4P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 3.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO251
 

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IPU80R2K4P7 Datasheet (PDF)

 ..1. Size:1218K  infineon
 ipu80r2k4p7.pdf pdf_icon

IPU80R2K4P7

IPU80R2K4P7MOSFETIPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 6.1. Size:1219K  infineon
 ipu80r2k0p7.pdf pdf_icon

IPU80R2K4P7

IPU80R2K0P7MOSFETIPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 6.2. Size:2275K  infineon
 ipd80r2k8ce ipu80r2k8ce.pdf pdf_icon

IPU80R2K4P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 6.3. Size:261K  inchange semiconductor
 ipu80r2k8ce.pdf pdf_icon

IPU80R2K4P7

isc N-Channel MOSFET Transistor IPU80R2K8CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

MOSTRAR MÁS

Otros transistores... IPT60R065S7 , IPT60R102G7 , IPT60R150G7 , IPT65R033G7 , IPT65R105G7 , IPT65R195G7 , IPU80R1K4P7 , IPU80R2K0P7 , IRLZ44N , IPU80R600P7 , IPU80R750P7 , IPU95R450P7 , IPU95R750P7 , IPW60R024CFD7 , IPW60R031CFD7 , IPW60R037CSFD , IPW60R040CFD7 .

 

 
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