IPU80R2K4P7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPU80R2K4P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 3.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO251

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IPU80R2K4P7 datasheet

 ..1. Size:1218K  infineon
 ipu80r2k4p7.pdf pdf_icon

IPU80R2K4P7

IPU80R2K4P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 6.1. Size:1219K  infineon
 ipu80r2k0p7.pdf pdf_icon

IPU80R2K4P7

IPU80R2K0P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 6.2. Size:2275K  infineon
 ipd80r2k8ce ipu80r2k8ce.pdf pdf_icon

IPU80R2K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R2K8CE, IPU80R2K8CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 6.3. Size:261K  inchange semiconductor
 ipu80r2k8ce.pdf pdf_icon

IPU80R2K4P7

isc N-Channel MOSFET Transistor IPU80R2K8CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

MOSTRAR MÁS

Otros transistores... IPT60R065S7, IPT60R102G7, IPT60R150G7, IPT65R033G7, IPT65R105G7, IPT65R195G7, IPU80R1K4P7, IPU80R2K0P7, AON6380, IPU80R600P7, IPU80R750P7, IPU95R450P7, IPU95R750P7, IPW60R024CFD7, IPW60R031CFD7, IPW60R037CSFD, IPW60R040CFD7