IPU80R2K4P7 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPU80R2K4P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 22 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 3.8 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
Тип корпуса: TO251
Аналог (замена) для IPU80R2K4P7
IPU80R2K4P7 Datasheet (PDF)
ipu80r2k4p7.pdf

IPU80R2K4P7MOSFETIPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(
ipu80r2k0p7.pdf

IPU80R2K0P7MOSFETIPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(
ipd80r2k8ce ipu80r2k8ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine
ipu80r2k8ce.pdf

isc N-Channel MOSFET Transistor IPU80R2K8CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Другие MOSFET... IPT60R065S7 , IPT60R102G7 , IPT60R150G7 , IPT65R033G7 , IPT65R105G7 , IPT65R195G7 , IPU80R1K4P7 , IPU80R2K0P7 , IRLZ44N , IPU80R600P7 , IPU80R750P7 , IPU95R450P7 , IPU95R750P7 , IPW60R024CFD7 , IPW60R031CFD7 , IPW60R037CSFD , IPW60R040CFD7 .
History: AOH3106 | VSD050P10MS | MCU60N04A | DH1K1N10 | MPSA65M990 | EKI10300 | CEM4228
History: AOH3106 | VSD050P10MS | MCU60N04A | DH1K1N10 | MPSA65M990 | EKI10300 | CEM4228



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