IPW60R045P7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW60R045P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 201 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 61 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 63 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Encapsulados: TO247
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IPW60R045P7 datasheet
ipw60r045p7.pdf
IPW60R045P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS
ipw60r045cpa.pdf
IPW60R045CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.045 DS(on),max Q 150 nC g,typ Features Worldwide best R in TO247 ds,on Ultra low gate charge PG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A
ipw60r045cp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
Otros transistores... IPU80R600P7, IPU80R750P7, IPU95R450P7, IPU95R750P7, IPW60R024CFD7, IPW60R031CFD7, IPW60R037CSFD, IPW60R040CFD7, BS170, IPW60R090CFD7, IPW60R105CFD7, IPW60R125CFD7, IPW60R180P7, IPW80R280P7, IPW80R290C3A, IPW80R360P7, IPZ40N04S5-3R1
History: IPT65R033G7 | NCEP055N10D
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