IPW60R045P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW60R045P7
Marking Code: 60R045P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 201 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 61 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 63 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO247
IPW60R045P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW60R045P7 Datasheet (PDF)
ipw60r045p7.pdf
IPW60R045P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS
ipw60r045cpa.pdf
IPW60R045CPACoolMOS Power TransistorProduct SummaryV 600 VDSR 0.045DS(on),maxQ 150 nCg,typFeatures Worldwide best R in TO247ds,on Ultra low gate chargePG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A
ipw60r045cp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CPFEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
