IRF200S234 Todos los transistores

 ..1. Size:1076K  infineon
 irf200s234.pdf

IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS R DS(on) typ. 14m Applications G max 16.9m Brushed Motor drive applications S I 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw

 ..2. Size:258K  inchange semiconductor
 irf200s234.pdf

isc N-Channel MOSFET Transistor IRF200S234 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:542K  international rectifier
 irf200b211.pdf

StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/

 8.2. Size:1063K  infineon
 irf200p223.pdf

IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS R DS(on) typ. 9.5m G Applications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power

 8.3. Size:245K  inchange semiconductor
 irf200b211.pdf

isc N-Channel MOSFET Transistor IRF200B211 IIRF200B211 FEATURES Static drain-source on-resistance RDS(on) 170m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications Resonant mode power supplies DC/DC and AC/DC converters

 8.4. Size:242K  inchange semiconductor
 irf200p223.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223 IIRF200P223 FEATURES Static drain-source on-resistance RDS(on) 11.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=270 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM