IRF200S234 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF200S234
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 462 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0169 Ohm
Package: D2PAK
IRF200S234 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF200S234 Datasheet (PDF)
irf200s234.pdf
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IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 14m Applications Gmax 16.9m Brushed Motor drive applications SI 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw
irf200s234.pdf
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isc N-Channel MOSFET Transistor IRF200S234FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irf200b211.pdf
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StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/
irf200p223.pdf
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IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 9.5m GApplications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power
irf200b211.pdf
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isc N-Channel MOSFET Transistor IRF200B211IIRF200B211FEATURESStatic drain-source on-resistance:RDS(on) 170mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsResonant mode power suppliesDC/DC and AC/DC converters
irf200p223.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF200P223IIRF200P223FEATURESStatic drain-source on-resistance:RDS(on)11.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=270A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .