All MOSFET. IRF200S234 Datasheet

 

IRF200S234 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF200S234
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 108 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 462 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0169 Ohm
   Package: D2PAK

 IRF200S234 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF200S234 Datasheet (PDF)

 ..1. Size:1076K  infineon
 irf200s234.pdf

IRF200S234 IRF200S234

IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 14m Applications Gmax 16.9m Brushed Motor drive applications SI 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw

 ..2. Size:258K  inchange semiconductor
 irf200s234.pdf

IRF200S234 IRF200S234

isc N-Channel MOSFET Transistor IRF200S234FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:542K  international rectifier
 irf200b211.pdf

IRF200S234 IRF200S234

StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/

 8.2. Size:1063K  infineon
 irf200p223.pdf

IRF200S234 IRF200S234

IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 9.5m GApplications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power

 8.3. Size:245K  inchange semiconductor
 irf200b211.pdf

IRF200S234 IRF200S234

isc N-Channel MOSFET Transistor IRF200B211IIRF200B211FEATURESStatic drain-source on-resistance:RDS(on) 170mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsResonant mode power suppliesDC/DC and AC/DC converters

 8.4. Size:242K  inchange semiconductor
 irf200p223.pdf

IRF200S234 IRF200S234

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF200P223IIRF200P223FEATURESStatic drain-source on-resistance:RDS(on)11.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=270A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSF7401 | AON6405 | BUK555-100B

 

 
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