IRF3007LPBF Todos los transistores

 

IRF3007LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3007LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 89 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0126 Ohm
   Paquete / Cubierta: TO262

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IRF3007LPBF Datasheet (PDF)

 ..1. Size:323K  international rectifier
irf3007spbf irf3007lpbf.pdf

IRF3007LPBF
IRF3007LPBF

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

 ..2. Size:323K  infineon
irf3007spbf irf3007lpbf.pdf

IRF3007LPBF
IRF3007LPBF

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

 6.1. Size:256K  inchange semiconductor
irf3007l.pdf

IRF3007LPBF
IRF3007LPBF

Isc N-Channel MOSFET Transistor IRF3007LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 7.1. Size:149K  international rectifier
irf3007.pdf

IRF3007LPBF
IRF3007LPBF

PD -94424AAUTOMOTIVE MOSFETIRF3007Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsDFeaturesVDSS = 75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.0126 Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] QualifiedID = 75ASDescriptionSpecifically designed for Autom

 7.2. Size:262K  international rectifier
irf3007pbf.pdf

IRF3007LPBF
IRF3007LPBF

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

 7.3. Size:615K  international rectifier
auirf3007.pdf

IRF3007LPBF
IRF3007LPBF

PD - 96417AUTOMOTIVE GRADEAUIRF3007HEXFET Power MOSFETFeaturesDl Advanced Planar Technology V(BR)DSS75Vl Low On-ResistanceRDS(on) typ.10.5ml 175C Operating Temperaturemax 12.6ml Fast SwitchingGID (Silicon Limited)l Fully Avalanche Rated 80Al Repetitive Avalanche Allowed SID (Package Limited)75Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive

 7.4. Size:262K  infineon
irf3007pbf.pdf

IRF3007LPBF
IRF3007LPBF

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

 7.5. Size:245K  inchange semiconductor
irf3007.pdf

IRF3007LPBF
IRF3007LPBF

isc N-Channel MOSFET Transistor IRF3007IIRF3007FEATURESStatic drain-source on-resistance:RDS(on) 12.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 7.6. Size:258K  inchange semiconductor
irf3007s.pdf

IRF3007LPBF
IRF3007LPBF

Isc N-Channel MOSFET Transistor IRF3007SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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