IRF3415LPBF Todos los transistores

 ..1. Size:1066K  international rectifier
 irf3415spbf irf3415lpbf.pdf

PD - 95112 IRF3415S/LPbF Lead-Free www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com IRF3415S/LPbF www.irf.com 5 IRF3415S/LPbF 6 www.irf.com IRF3415S/LPbF www.irf.com 7 IRF3415S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I

 6.1. Size:255K  inchange semiconductor
 irf3415l.pdf

Isc N-Channel MOSFET Transistor IRF3415L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150

 7.1. Size:94K  international rectifier
 irf3415.pdf

PD - 91477D IRF3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.042 Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef

 7.2. Size:236K  international rectifier
 auirf3415.pdf

PD - 97625 AUTOMOTIVE GRADE AUIRF3415 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 0.042 l Fast Switching G l Fully Avalanche Rated ID 43A S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S Descriptio

 7.3. Size:203K  international rectifier
 irf3415pbf.pdf

IRF3415PbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description S

 7.4. Size:156K  international rectifier
 irf3415s.pdf

PD - 91509C IRF3415S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175 C Operating Temperature RDS(on) = 0.042 Fast Switching G Fully Avalanche Rated ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 7.5. Size:244K  inchange semiconductor
 irf3415.pdf

isc N-Channel MOSFET Transistor IRF3415 IIRF3415 FEATURES Static drain-source on-resistance RDS(on) 42m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Combine with the fast switching speed and ruggedized device design ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.6. Size:257K  inchange semiconductor
 irf3415s.pdf

Isc N-Channel MOSFET Transistor IRF3415S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt