IRF3415LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3415LPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 43 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 200(max) nC
Время нарастания (tr): 55 ns
Выходная емкость (Cd): 640 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.042 Ohm
Тип корпуса: TO262
Аналог (замена) для IRF3415LPBF
IRF3415LPBF Datasheet (PDF)
irf3415spbf irf3415lpbf.pdf
PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I
irf3415spbf irf3415lpbf.pdf
PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I
irf3415l.pdf
Isc N-Channel MOSFET Transistor IRF3415LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150
irf3415.pdf
PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef
auirf3415.pdf
PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptio
irf3415pbf.pdf
IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S
irf3415s.pdf
PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
irf3415pbf.pdf
IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S
irf3415.pdf
isc N-Channel MOSFET Transistor IRF3415IIRF3415FEATURESStatic drain-source on-resistance:RDS(on) 42mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)
irf3415s.pdf
Isc N-Channel MOSFET Transistor IRF3415SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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