IRF530NLPBF Todos los transistores

 ..1. Size:279K  international rectifier
 irf530nspbf irf530nlpbf.pdf

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

 6.1. Size:256K  inchange semiconductor
 irf530nl.pdf

Isc N-Channel MOSFET Transistor IRF530NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100

 7.1. Size:178K  international rectifier
 irf530ns.pdf

PD - 91352A IRF530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175 C Operating Temperature RDS(on) = 0.11 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

 7.2. Size:183K  international rectifier
 irf530npbf.pdf

PD - 94962 IRF530NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m l Fast Switching G l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremel

 7.3. Size:279K  international rectifier
 irf530nspbf.pdf

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

 7.4. Size:212K  international rectifier
 irf530n.pdf

PD - 91351 IRF530N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 90m G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 7.5. Size:98K  philips
 irf530n 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 A g RDS(ON) 110 m s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect po

 7.6. Size:854K  cn vbsemi
 irf530ns.pdf

IRF530NS www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET

 7.7. Size:808K  cn vbsemi
 irf530n.pdf

IRF530N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI

 7.8. Size:258K  inchange semiconductor
 irf530ns.pdf

Isc N-Channel MOSFET Transistor IRF530NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.9. Size:245K  inchange semiconductor
 irf530n.pdf

isc N-Channel MOSFET Transistor IRF530N IIRF530N FEATURES Static drain-source on-resistance RDS(on) 0.09 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM