IRF6644PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF6644PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: DIRECTFET

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IRF6644PBF Datasheet (PDF)

..1. Size:1485K infineon
irf6644pbf.pdf

IRF6644PbF IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) V V R (typ )Quality Requirement Category: Consumer DSS GS DS(on) . 100V min. 20V max 10.3m@ 10V Applications Q Q V g tot gd gs(th) RoHS Compliant 28nC 9.0nC 3.7V Lead-Free (Qualified up to 260C Reflow) Application Specifies MOSFETs Ideal fo

7.1. Size:262K international rectifier
irf6644.pdf

PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (

8.1. Size:250K international rectifier
irf6641pbf.pdf

PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica

8.2. Size:241K international rectifier
irf6646.pdf

PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (

8.3. Size:229K international rectifier
irf6645pbf.pdf

IRF6645PbFIRF6645TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen-Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Application Specific MOSFETs100V max 20V max 28m@ 10Vl Ideal for High Performance Isolated ConverterPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectifica

8.4. Size:263K international rectifier
irf6643pbf.pdf

PD - 97112AIRF6643TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)150V max 20V max 29m@ 10Vl Application Specific MOSFETsl Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket39nC 11nC 4.0Vl Optimized for Synchronous Rectificat

8.5. Size:554K infineon
irf6648pbf irf6648trpbf.pdf

IRF6648PbF IRF6648TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) Application Specific MOSFETs 60V min 20V max 5.5m@ 10V Optimized for Synchronous Rectification for 5V to 12V outputs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Co

8.6. Size:649K infineon
irf6646pbf irf6646trpbf.pdf

PD - 97224AIRF6646PbFIRF6646TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant RDS(on) VDSS VGSl Lead-Free (Qualified up to 260C Reflow)7.6m@ 10V80V max 20V maxl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for High Performance Isolated ConverterPrimary Switch Socket36nC 12nC 2.0nC 48nC 18nC

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