IRF6644PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF6644PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.8 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: DIRECTFET
Búsqueda de reemplazo de MOSFET IRF6644PBF
IRF6644PBF Datasheet (PDF)
irf6644pbf.pdf
IRF6644PbF IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) V V R (typ )Quality Requirement Category: Consumer DSS GS DS(on) . 100V min. 20V max 10.3m@ 10V Applications Q Q V g tot gd gs(th) RoHS Compliant 28nC 9.0nC 3.7V Lead-Free (Qualified up to 260C Reflow) Application Specifies MOSFETs Ideal fo
irf6644.pdf
PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
irf6641pbf.pdf
PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
irf6646.pdf
PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
irf6645pbf.pdf
IRF6645PbFIRF6645TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen-Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Application Specific MOSFETs100V max 20V max 28m@ 10Vl Ideal for High Performance Isolated ConverterPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectifica
irf6643pbf.pdf
PD - 97112AIRF6643TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)150V max 20V max 29m@ 10Vl Application Specific MOSFETsl Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket39nC 11nC 4.0Vl Optimized for Synchronous Rectificat
irf6648pbf irf6648trpbf.pdf
IRF6648PbF IRF6648TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) Application Specific MOSFETs 60V min 20V max 5.5m@ 10V Optimized for Synchronous Rectification for 5V to 12V outputs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Co
irf6646pbf irf6646trpbf.pdf
PD - 97224AIRF6646PbFIRF6646TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant RDS(on) VDSS VGSl Lead-Free (Qualified up to 260C Reflow)7.6m@ 10V80V max 20V maxl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for High Performance Isolated ConverterPrimary Switch Socket36nC 12nC 2.0nC 48nC 18nC
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
