IRF6644PBF Datasheet and Replacement
Type Designator: IRF6644PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DIRECTFET
IRF6644PBF substitution
IRF6644PBF Datasheet (PDF)
irf6644pbf.pdf

IRF6644PbF IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) V V R (typ )Quality Requirement Category: Consumer DSS GS DS(on) . 100V min. 20V max 10.3m@ 10V Applications Q Q V g tot gd gs(th) RoHS Compliant 28nC 9.0nC 3.7V Lead-Free (Qualified up to 260C Reflow) Application Specifies MOSFETs Ideal fo
irf6644.pdf

PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
irf6641pbf.pdf

PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
irf6646.pdf

PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
Datasheet: IRF5803PBF , IRF60DM206 , IRF6614PBF , IRF6616PBF , IRF6618PBF , IRF6620PBF , IRF6623PBF , IRF6637PBF , IRF740 , IRF6646PBF , IRF6648PBF , IRF6662PBF , IRF6665PBF , IRF6668PBF , IRF6674TRPBF , IRF6715MPBF , IRF6722MPBF .
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