IRF7105PBF Todos los transistores

 ..1. Size:302K  international rectifier
 irf7105pbf.pdf

PD - 95164 IRF7105PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel Mosfet 2 7 l Surface Mount G1 D1 VDSS 25V -25V l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 RDS(on) 0.10 0.25 G2 D2 l Fast Switching P-CHANNEL MOSFET l Lead-Free Top View ID 3.5A -2.3A

 0.1. Size:609K  international rectifier
 irf7105pbf-1.pdf

IRF7105TRPbF-1 HEXFET Power MOSFET N-CHANNEL MOSFET 1 8 N-CH P-CH S1 D1 VDS 25 -25 V 2 7 G1 D1 RDS(on) max 3 6 0.1 0.25 S2 D2 (@V = 10V) GS 4 5 G2 D2 Qg (typical) 9.4 10 nC P-CHANNEL MOSFET ID 3.5 -2.3 A SO-8 Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techn

 7.1. Size:607K  1
 irf7105q.pdf

PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET N-CHANNEL MOSFET l Advanced Process Technology 1 8 N-Ch P-Ch S1 D1 l Ultra Low On-Resistance 2 7 G1 D1 l Dual N and P Channel MOSFET VDSS 25V -25V l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 5 RDS(on) 0.10 0.25 G2 D2 l 150 C Operating Temperature P-CHANNEL MOSFET l Lead-Free Top View ID 3.5A -2.3A

 7.2. Size:224K  international rectifier
 irf7105.pdf

PD - 9.1097C IRF7105 HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel Mosfet G1 D1 VDSS 25V -25V Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) 0.10 0.25 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET Fast Switching Top View ID 3.5A -2.3A Description Fourth Ge

 7.3. Size:1286K  cn vbsemi
 irf7105trpbf.pdf

IRF7105TRPBF www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at