STD8N10T4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD8N10T4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de STD8N10T4 MOSFET
- Selecciónⓘ de transistores por parámetros
STD8N10T4 datasheet
7.2. Size:299K st
std8n10.pdf 
This datasheet has been downloaded from http //www.digchip.com at this page
9.1. Size:341K 1
std8n06-1 std8n06t4.pdf
STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V
9.2. Size:698K st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf
STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V
9.3. Size:1402K st
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf
STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V
9.4. Size:826K st
std8nf25.pdf
STD8NF25 N-channel 250 V, 318 m , 8 A STripFET II Power MOSFET in DPAK package Datasheet production data Features RDS(on) Order code VDSS ID max. STD8NF25 250 V
9.5. Size:341K st
std8n06.pdf
STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V
9.6. Size:726K st
std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf
STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V
9.7. Size:122K st
std8ns25.pdf
STD8NS25 N-CHANNEL 250V - 0.38 - 8A DPAK MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD8NS25 250 V
9.9. Size:1302K st
std8n80k5.pdf
STD8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STD8N80K5 800 V 0.95 6 A 110 W TAB Worldwide best FOM (figure of merit) 3 Ultra low gate charge 1 100% avalanche tested DPAK Zener protected Applications Switching applications F
9.10. Size:377K st
std8n60dm2.pdf
STD8N60DM2 Datasheet N-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD8N60DM2 600 V 600 m 8 A 85 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze
9.11. Size:698K st
stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf
STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V
9.13. Size:700K st
stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf
STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V
Otros transistores... STD6N10T4
, STD8N06-1
, STD8N06T4
, STD8N10
, STD8N10-1
, STD8N10L
, STD8N10L-1
, STD8N10LT4
, 2N7000
, STE100N20
, STE150N10
, STE15N100
, STE16N100
, STE180N05
, STE180N10
, STE22N80
, STE24N90
.
History: STH7NA80
