STD8N10T4 Datasheet. Specs and Replacement

Type Designator: STD8N10T4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: DPAK

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STD8N10T4 datasheet

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STD8N10T4

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STD8N10T4

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STD8N10T4

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒

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Detailed specifications: STD6N10T4, STD8N06-1, STD8N06T4, STD8N10, STD8N10-1, STD8N10L, STD8N10L-1, STD8N10LT4, IRFB4227, STE100N20, STE150N10, STE15N100, STE16N100, STE180N05, STE180N10, STE22N80, STE24N90

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