8205S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8205S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 6.24 nC
Tiempo de subida (tr): 4.4 nS
Conductancia de drenaje-sustrato (Cd): 98.48 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT23-6
Búsqueda de reemplazo de MOSFET 8205S
8205S Datasheet (PDF)
8205a 8205s.pdf
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8205-A20V N-Channel Enhancement-Mode MOSFET 2.5V TSSOP-8/SOT-23-6 8205A/TSSOP-8 8205S/SOT-23-6 G1 NC G2654D1/D28 D1/D2S1D S2 S17 S2S16 S2G15 G2Drain123 N-Channel MOSFET Gate1Gate2So
8205s.pdf
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-6 Plastic-Encapsulate MOSFETS 8205S Dual N-Channel MOSFET8205S V(BR)DSS RDS(on)MAX IDMax SOT-23-60.025 @ 4.5V20V5.0A0.033 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLI
sl8205s.pdf
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SL8205S Power MOSFET Dual N-Channel APPLIACTION FEATURES Portable Equipment 20V 5A N-channel Trench Mosfet Battery Powered System RDSON27m @Vgs=4.5V, Id=5A RDSON36m @Vgs=2.5V, Id=3A Low gate Charge Fast switching capability High reliability and rugged SYMBOL SOT-23-6ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Vo
jst8205s.pdf
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JST8205S20V,4.8ADual N-Channel MosfetFEATURESSOT-23-6LRDS(ON) 21.5m @VGS=4.5VRDS(ON) 27.5m @VGS=2.5VAPPLICATIONSLoad Switch for Portable DevicesBattery ProtectionPower ManagementMARKING Dual N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20VGate-Source Voltage V 12GSI 4.8D
si8205s.pdf
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SOT-23-6 Plastic-Encapsulate MOSFETS SI8205S Dual N-Channel MOSFETSI8205S V(BR)DSS RDS(on)MAX IDMax SOT-23-60.025 @ 4.5V20V5.0A0.033 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICATION Battery Protection Load Switch
.8205s .8205p.pdf
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FINE MADE MICROELECTRONICS GROUP CO., LTD..8205S/P (S&CIC2050) 20V N MOS 2 3 420V N-Channel Enhancement-Mode MOSFETRDS(ON), Vgs@2.5V, Ids@3.0A = 29mRDS(ON), Vgs@4.0V, Ids@4.0A = 25mRDS(ON), Vgs@4.5V, Ids@4.5A = 22m
sc8205s.pdf
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FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.SC8205S (S&CIC0706) 20V N MOS 20V N-Channel Enhancement-Mode MOSFET2 3 4RDS(ON), Vgs@1.8V, Ids@2.0A
gtt8205s.pdf
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GTT8205Swww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23
stt8205s.pdf
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STT8205Swww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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