SJMN60R15F
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SJMN60R15F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21
nS
Cossⓘ - Capacitancia
de salida: 2181
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15
Ohm
Paquete / Cubierta:
TO220F
- Selección de transistores por parámetros
SJMN60R15F
Datasheet (PDF)
..1. Size:635K kodenshi
sjmn60r15f.pdf 
SJMN60R15F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.12 (Typ.) DS(on) Ultra low gate charge: Qg=62nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN60R15F SJMN60R15 TO
7.1. Size:642K kodenshi
sjmn60r38f.pdf
SJMN60R38F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.34 (Typ.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN60R38F SJMN60R38 TO
8.1. Size:567K 1
sjmn600r70f.pdf
SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN600R70F N600R70 T
8.2. Size:778K auk
sjmn600r60f.pdf
SJMN600R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R60F N600R60 T
8.3. Size:732K auk
sjmn600r65cd.pdf
SJMN600R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on)D Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN6
8.4. Size:803K auk
sjmn600r70mf.pdf
SJMN600R70MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=15nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package
8.5. Size:586K auk
sjmn600r65b.pdf
SJMN600R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN600R65B S
8.6. Size:629K auk
sjmn600r70zf.pdf
SJMN600R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70ZF N600R70Z TO-220F-3L Marking Information Colum
8.7. Size:779K auk
sjmn600r65f.pdf
SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R65F N600R65 T
8.8. Size:473K auk
sjmn600r65d.pdf
SJMN600R65D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R65D SJMN600R65
8.9. Size:538K auk
sjmn600r60d.pdf
SJMN600R60D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R60D SJMN600R60
8.10. Size:759K auk
sjmn600r70d.pdf
SJMN600R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN600R70D SJMN600R7
8.11. Size:773K auk
sjmn600r65cf.pdf
SJMN600R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN6
8.12. Size:657K auk
sjmn600r70i.pdf
SJMN600R70I Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information I-PAK Part Number Marking Package (Short Lead) I-PAK SJM
8.13. Size:678K auk
sjmn600r70zd.pdf
SJMN600R70ZD Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN600R70ZD SJMN600R70Z TO-252 Marking Information Column
8.14. Size:781K auk
sjmn600r70f.pdf
SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70F N600R70 T
8.15. Size:764K auk
sjmn600r70md.pdf
SJMN600R70MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) D DS(on) Ultra low gate charge: Qg=15nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN600R
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History: WML28N60C4
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