ME20P06-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME20P06-G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: TO252

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ME20P06-G Datasheet (PDF)

..1. Size:1338K matsuki electric
me20p06 me20p06-g.pdf

ME20P06/ME20P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P06 is the P-Channel logic enhancement mode power field RDS(ON)78m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)100m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

7.1. Size:828K cn vbsemi
me20p06.pdf

ME20P06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo

8.1. Size:1673K matsuki electric
me20p03 me20p03-g.pdf

ME20P03/ME20P03-G P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P03 is the P-Channel logic enhancement mode power field RDS(ON)32m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)42m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

8.2. Size:837K cn vbsemi
me20p03.pdf

ME20P03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Cha

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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