IRF9530NLPBF Todos los transistores

 

IRF9530NLPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9530NLPBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-262

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IRF9530NLPBF datasheet

 ..1. Size:817K  infineon
 irf9530nspbf irf9530nlpbf.pdf pdf_icon

IRF9530NLPBF

IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175 C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In

 6.1. Size:225K  international rectifier
 irf9530npbf.pdf pdf_icon

IRF9530NLPBF

IRF9530NPbF l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175 C Operating Temperature l Fast Switching DS(on) l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description

 6.2. Size:173K  international rectifier
 irf9530ns.pdf pdf_icon

IRF9530NLPBF

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

 6.3. Size:113K  international rectifier
 irf9530n.pdf pdf_icon

IRF9530NLPBF

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

MOSTRAR MÁS

Otros transistores... IRF7807TRPBF-1 , IRF7807VTRPBF-1 , IRF7946TRPBF , IRF8010LPBF , IRF8301MTRPBF , IRF9389PBF , IRF9410PBf , IRF9520NPBF , IRFB4115 , IRF9910PBF , IRF9952PBF , IRF9953PBF , IRF9956PBF , IRFB4410PBF , IRFB7430PBF , IRFB7434PBF , IRFB7437PBF .

 

 

 


 
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