IRF9530NLPBF MOSFET PDF: P-Ch, 100V, 14A. Datasheet. Full specification with pinout and replacement list

IRF9530NLPBF Specs and Replacement

   Type Designator: IRF9530NLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-262

IRF9530NLPBF substitution

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IRF9530NLPBF datasheet

..1. Size:817K infineon
irf9530nspbf irf9530nlpbf.pdf pdf_icon

IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175 C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In... See More ⇒

6.1. Size:225K international rectifier
irf9530npbf.pdf pdf_icon

IRF9530NPbF l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175 C Operating Temperature l Fast Switching DS(on) l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description ... See More ⇒

6.2. Size:173K international rectifier
irf9530ns.pdf pdf_icon

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒

6.3. Size:113K international rectifier
irf9530n.pdf pdf_icon

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒