IRF9952PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9952PBF
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.8 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
IRF9952PBF Datasheet (PDF)
irf9952pbf.pdf

PD - 95135IRF9952PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7l Dual N and P Channel MOSFETG1 D1l Surface Mount VDSS 30V -30V3 6S2 D2l Very Low Gate Charge and4 5G2 D2Switching LossesP-CHANNEL MOSFETRDS(on) 0.10 0.25l Fully Avalanche RatedTop Viewl Lead-FreeRecommended upgrade:
auirf9952q.pdf

AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH1 8S1 D1 Low On-Resistance 2 7G1 D1 Logic Level Gate Drive VDSS 30V -30V3 6S2 D2 Dual N and P Channel MOSFET 45G2 D2RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 3.5A -2.3A
irf9952.pdf

PD - 9.1561AIRF9952PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE T1 8 N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MOSFETG1 D1 Surface Mount VDSS 30V -30V3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesP -CH AN N EL M OSFETRDS(on) 0.10 0.25 Fully Avalanche RatedT op V iewRecommended upgrade:
irf9952qpbf.pdf

PD - 96115IRF9952QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETl Ultra Low On-Resistance 1 8N-Ch P-ChS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6l Available in Tape & ReelS2 D2l 150C Operating Temperature4 5G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.10 0.25l Lead-FreeTop V
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: STL35N15F3 | SIS892ADN | VS4080AI | IPB072N15N3G | AM3428N | IRHMK57260SE | 2SK299
History: STL35N15F3 | SIS892ADN | VS4080AI | IPB072N15N3G | AM3428N | IRHMK57260SE | 2SK299



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