IRF9952PBF - аналоги, параметры транзистора - Справочник транзисторов

IRF9952PBF даташит

..1. Size:224K international rectifier
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PD - 95135 IRF9952PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 l Ultra Low On-Resistance 2 7 l Dual N and P Channel MOSFET G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Very Low Gate Charge and 4 5 G2 D2 Switching Losses P-CHANNEL MOSFET RDS(on) 0.10 0.25 l Fully Avalanche Rated Top View l Lead-Free Recommended upgrade

7.1. Size:324K 1
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AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH 1 8 S1 D1 Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive VDSS 30V -30V 3 6 S2 D2 Dual N and P Channel MOSFET 4 5 G2 D2 RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 3.5A -2.3A

7.2. Size:134K international rectifier
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PD - 9.1561A IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel MOSFET G1 D1 Surface Mount VDSS 30V -30V 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses P -CH AN N EL M OSFET RDS(on) 0.10 0.25 Fully Avalanche Rated T op V iew Recommended upgrade

7.3. Size:280K international rectifier
irf9952qpbf.pdf pdf_icon

PD - 96115 IRF9952QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET l Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 l Available in Tape & Reel S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.10 0.25 l Lead-Free Top V

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