IRFP140NPBF Todos los transistores

 

IRFP140NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP140NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: TO-247AC

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IRFP140NPBF datasheet

 ..1. Size:348K  international rectifier
 irfp140npbf.pdf pdf_icon

IRFP140NPBF

PD- 95711 IRFP140NPbF Lead-Free www.irf.com 1 8/2/04 IRFP140NPbF 2 www.irf.com IRFP140NPbF www.irf.com 3 IRFP140NPbF 4 www.irf.com IRFP140NPbF www.irf.com 5 IRFP140NPbF 6 www.irf.com IRFP140NPbF www.irf.com 7 IRFP140NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH ASSEM

 6.1. Size:158K  international rectifier
 irfp140n.pdf pdf_icon

IRFP140NPBF

PD - 91343B IRFP140N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.052 Fully Avalanche Rated G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Thi

 6.2. Size:2133K  cn vbsemi
 irfp140n.pdf pdf_icon

IRFP140NPBF

IRFP140N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.035 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-247AC G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RAT

 6.3. Size:241K  inchange semiconductor
 irfp140n.pdf pdf_icon

IRFP140NPBF

isc N-Channel MOSFET Transistor IRFP140N IIRFP140N FEATURES Static drain-source on-resistance RDS(on) 52m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

MOSTRAR MÁS

Otros transistores... IRFH8202TRPBF , IRFH8303PBF , IRFH8311PBF , IRFH8324PBF , IRFHM792PBF , IRFHM8326PBF , IRFHM8329PBF , IRFI7446GPBF , IRF1407 , IRFR3707ZPBF , IRFS23N15DPBF , IRFS31N20DP , IRFSL23N20DPBF , IRFSL31N20DP , IRFSL33N15DPBF , IRFSL41N15DPBF , IRFSL52N15DPBF .

History: K2698 | IRFH7545PBF

 

 

 


 
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