IRFSL23N20DPBF Todos los transistores

 ..1. Size:275K  international rectifier
 irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf

PD - 95536 IRFB23N20DPbF IRFS23N20DPbF SMPS MOSFET IRFSL23N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.10 24A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

 3.1. Size:244K  inchange semiconductor
 irfsl23n20d.pdf

Isc N-Channel MOSFET Transistor IRFSL23N20D FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 6.1. Size:278K  international rectifier
 irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.090 23A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 l F

 6.2. Size:142K  international rectifier
 irfs23n15d irfb23n15d irfsl23n15d.pdf

PD - 93894A IRFB23N15D IRFS23N15D SMPS MOSFET IRFSL23N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalan

 6.3. Size:278K  international rectifier
 irfb23n15dpbf irfsl23n15dpbf.pdf

PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.090 23A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 l F

 6.4. Size:140K  international rectifier
 irfsl23n15d.pdf

PD - 93894A IRFB23N15D IRFS23N15D SMPS MOSFET IRFSL23N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalan

 6.5. Size:232K  inchange semiconductor
 irfsl23n15d.pdf

Isc N-Channel MOSFET Transistor IRFSL23N15D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage