IRFSL23N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL23N20DPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 VQgⓘ - Carga de la puerta: 57 nC
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO-262
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IRFSL23N20DPBF Datasheet (PDF)
irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf
PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc
irfsl23n20d.pdf
Isc N-Channel MOSFET Transistor IRFSL23N20DFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
irfs23n15d irfb23n15d irfsl23n15d.pdf
PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan
irfb23n15dpbf irfsl23n15dpbf.pdf
PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
irfsl23n15d.pdf
PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan
irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf
PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
irfsl23n15d.pdf
Isc N-Channel MOSFET Transistor IRFSL23N15DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F