IRFSL23N20DPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL23N20DPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 170
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 57
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-262
IRFSL23N20DPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL23N20DPBF
Datasheet (PDF)
..1. Size:275K infineon
irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf 
PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc
3.1. Size:244K inchange semiconductor
irfsl23n20d.pdf
Isc N-Channel MOSFET Transistor IRFSL23N20DFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
6.1. Size:142K international rectifier
irfs23n15d irfb23n15d irfsl23n15d.pdf
PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan
6.2. Size:278K international rectifier
irfb23n15dpbf irfsl23n15dpbf.pdf
PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
6.3. Size:140K international rectifier
irfsl23n15d.pdf
PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan
6.4. Size:278K infineon
irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf
PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F
6.5. Size:232K inchange semiconductor
irfsl23n15d.pdf
Isc N-Channel MOSFET Transistor IRFSL23N15DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
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