IRFU3504ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFU3504ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 90 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 42 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 74 nS
   Conductancia de drenaje-sustrato (Cd): 340 pF
   Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
   Paquete / Cubierta: TO251

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IRFU3504ZPBF Datasheet (PDF)

..1. Size:331K infineon
irfr3504zpbf irfu3504zpbf.pdf

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

5.1. Size:261K inchange semiconductor
irfu3504z.pdf

isc N-Channel MOSFET Transistor IRFU3504ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

7.1. Size:332K international rectifier
irfr3505pbf irfu3505pbf.pdf

PD - 95511BIRFR3505PbFIRFU3505PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013G Lead-FreeID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resis

7.2. Size:2741K cn vbsemi
irfu3505p.pdf

IRFU3505Pwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbo

7.3. Size:261K inchange semiconductor
irfu3505.pdf

isc N-Channel MOSFET Transistor IRFU3505FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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