IRL2505LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL2505LPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 104 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 160 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de IRL2505LPBF MOSFET
IRL2505LPBF Datasheet (PDF)
irl2505spbf irl2505lpbf.pdf

PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
irl2505lpbf irl2505spbf.pdf

PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
irl2505s irl2505l.pdf

PD - 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
irl2505.pdf

PD - 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
Otros transistores... IRFU3710Z-701PBF , IRFU3710ZPBF , IRFZ44ELPBF , IRFZ44VZLPBF , IRFZ48NSPBF , IRFZ48VPBF , IRL1404ZLPBF , IRL1404ZSPBF , STP65NF06 , IRL2910LPBF , IRL40B209 , IRL40T209 , IRL530NPBF , IRL540NLPBF , IRL60HS118 , IRL60SC216 , IRL80HS120 .
History: RU40120L | SSB65R190S2 | SIS472ADN | STB25NM50N-1 | SSF60R190S2E | WPMD2011 | WPM3407
History: RU40120L | SSB65R190S2 | SIS472ADN | STB25NM50N-1 | SSF60R190S2E | WPMD2011 | WPM3407



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMPL1025AK | JMPL1025AE | JMPL0648PKQ | JMPL0648AU | JMPL0648AK | JMPL0648AG | JMPL0625AP | JMPL0622AK | JMSL0302PU | JMSL0302PG2 | JMSL0302DG | JMSL0302BU | JMSL0302AK | JMSL0301TG | JMSL0301AG | JMSH2010PTL
Popular searches
d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement