IRL40B209 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL40B209
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 180 nC
   trⓘ - Tiempo de subida: 198 nS
   Cossⓘ - Capacitancia de salida: 1990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00125 Ohm
   Paquete / Cubierta: TO-220AB

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IRL40B209 Datasheet (PDF)

..1. Size:540K infineon
irl40b209.pdf

StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.0m Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications GID (Silicon Limited) 414A Resonant mode power supplies

7.1. Size:618K international rectifier
irl40b212 irl40s212.pdf

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe

7.2. Size:538K international rectifier
irl40b215.pdf

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

7.3. Size:618K infineon
irl40b212 irl40s212.pdf

7.4. Size:542K infineon
irl40b215.pdf

7.5. Size:245K inchange semiconductor
irl40b212.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

7.6. Size:246K inchange semiconductor
irl40b215.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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