IRL40B209 Todos los transistores

 

IRL40B209 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL40B209
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 198 nS
   Cossⓘ - Capacitancia de salida: 1990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00125 Ohm
   Paquete / Cubierta: TO-220AB
 

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IRL40B209 Datasheet (PDF)

 ..1. Size:540K  international rectifier
 irl40b209.pdf pdf_icon

IRL40B209

StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.0m Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications GID (Silicon Limited) 414A Resonant mode power supplies

 7.1. Size:618K  international rectifier
 irl40b212 irl40s212.pdf pdf_icon

IRL40B209

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe

 7.2. Size:542K  international rectifier
 irl40b215.pdf pdf_icon

IRL40B209

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 7.3. Size:245K  inchange semiconductor
 irl40b212.pdf pdf_icon

IRL40B209

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

MOSTRAR MÁS

Otros transistores... IRFZ44ELPBF , IRFZ44VZLPBF , IRFZ48NSPBF , IRFZ48VPBF , IRL1404ZLPBF , IRL1404ZSPBF , IRL2505LPBF , IRL2910LPBF , 60N06 , IRL40T209 , IRL530NPBF , IRL540NLPBF , IRL60HS118 , IRL60SC216 , IRL80HS120 , IRLI530NPBF , IRLU9343-701PBF .

History: WMJ10N105C2

 

 
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