IRL530NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL530NPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 79 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 17 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 34(max) nC
Tiempo de subida (tr): 53 nS
Conductancia de drenaje-sustrato (Cd): 160 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET IRL530NPBF
IRL530NPBF Datasheet (PDF)
irl530npbf.pdf
PD - 95451IRL530NPbF Lead-Freewww.irf.com 16/23/04IRL530NPbF2 www.irf.comIRL530NPbFwww.irf.com 3IRL530NPbF4 www.irf.comIRL530NPbFwww.irf.com 5IRL530NPbF6 www.irf.comIRL530NPbFwww.irf.com 7IRL530NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
irl530n.pdf
PD - 91348BIRL530NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
irl530ns irl530nl.pdf
PD - 91349BIRL530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175C Operating TemperatureRDS(on) = 0.10G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irl530nspbf irl530nlpbf.pdf
PD- 95593IRL530NSPbFIRL530NLPbF Lead-Freewww.irf.com 107/21/04IRL530NS/LPbF2 www.irf.comIRL530NS/LPbFwww.irf.com 3IRL530NS/LPbF4 www.irf.comIRL530NS/LPbFwww.irf.com 5IRL530NS/LPbF6 www.irf.comIRL530NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance
irl530nspbf irl530nlpbf.pdf
PD- 95593IRL530NSPbFIRL530NLPbF Lead-Freewww.irf.com 107/21/04IRL530NS/LPbF2 www.irf.comIRL530NS/LPbFwww.irf.com 3IRL530NS/LPbF4 www.irf.comIRL530NS/LPbFwww.irf.com 5IRL530NS/LPbF6 www.irf.comIRL530NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance
irl530n.pdf
isc N-Channel MOSFET Transistor IRL530NIIRL530NFEATURESStatic drain-source on-resistance:RDS(on) 0.1Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONReliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
irl530ns.pdf
Isc N-Channel MOSFET Transistor IRL530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irl530nl.pdf
Isc N-Channel MOSFET Transistor IRL530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
