PD - 95451IRL530NPbF Lead-Freewww.irf.com 16/23/04IRL530NPbF2 www.irf.comIRL530NPbFwww.irf.com 3IRL530NPbF4 www.irf.comIRL530NPbFwww.irf.com 5IRL530NPbF6 www.irf.comIRL530NPbFwww.irf.com 7IRL530NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

PD - 91348BIRL530NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

PD - 91349BIRL530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175C Operating TemperatureRDS(on) = 0.10G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

PD- 95593IRL530NSPbFIRL530NLPbF Lead-Freewww.irf.com 107/21/04IRL530NS/LPbF2 www.irf.comIRL530NS/LPbFwww.irf.com 3IRL530NS/LPbF4 www.irf.comIRL530NS/LPbFwww.irf.com 5IRL530NS/LPbF6 www.irf.comIRL530NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

isc N-Channel MOSFET Transistor IRL530NIIRL530NFEATURESStatic drain-source on-resistance:RDS(on) 0.1Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONReliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Isc N-Channel MOSFET Transistor IRL530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Isc N-Channel MOSFET Transistor IRL530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100