IRL60HS118 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL60HS118
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 11.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 5.3 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: PQFN2X2

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IRL60HS118 Datasheet (PDF)

..1. Size:1078K infineon
irl60hs118.pdf

IRL60HS118 Typical values (unless otherwise specified) Target Applications Wireless charging V V R (max )DSS GS DS(on) . Adapter 60V min. 20V max 17m@ 10V Telecom Q Q V g tot gd gs(th)5.3nC 2.1nC 1.7V Benefits Top View Higher power density designs Higher switching frequency D 1 6 D Uses OptiMOSTM5 Chip Reduced parts count

9.1. Size:692K international rectifier
irl60b216.pdf

StrongIRFET IRL60B216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.5mBattery powered circuits max 1.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 305A Resonant mode power suppli

9.2. Size:972K infineon
irl60sc216.pdf

IRL60SC216MOSFETD-PAK 7pinIR MOSFET - StrongIRFETFeaturestab Very low RDS(on) Optimized for logic level drive High current carrying capability 175C operating temperature7 Optimized for broadest availability from distribution partners 654321Benefits Reduced conduction losses Increased power density Increased reliability vers

9.3. Size:692K infineon
irl60s216 irl60sl216.pdf

IR MOSFET StrongIRFET IRL60S216 IRL60SL216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.6mBattery powered circuits Half-bridge and full-bridge topologies max 1.95mG Synchronous rectifier applications ID (Silicon Limited) 298A R

9.4. Size:258K inchange semiconductor
irl60s216.pdf

Isc N-Channel MOSFET Transistor IRL60S216FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

9.5. Size:246K inchange semiconductor
irl60b216.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL60B216IIRL60B216FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

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