IRL60HS118 Typical values (unless otherwise specified) Target Applications Wireless charging V V R (max )DSS GS DS(on) . Adapter 60V min. 20V max 17m@ 10V Telecom Q Q V g tot gd gs(th)5.3nC 2.1nC 1.7V Benefits Top View Higher power density designs Higher switching frequency D 1 6 D Uses OptiMOSTM5 Chip Reduced parts count

StrongIRFET IRL60B216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.5mBattery powered circuits max 1.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 305A Resonant mode power suppli

IRL60SC216MOSFETD-PAK 7pinIR MOSFET - StrongIRFETFeaturestab Very low RDS(on) Optimized for logic level drive High current carrying capability 175C operating temperature7 Optimized for broadest availability from distribution partners 654321Benefits Reduced conduction losses Increased power density Increased reliability vers

IR MOSFET StrongIRFET IRL60S216 IRL60SL216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.6mBattery powered circuits Half-bridge and full-bridge topologies max 1.95mG Synchronous rectifier applications ID (Silicon Limited) 298A R

Isc N-Channel MOSFET Transistor IRL60S216FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL60B216IIRL60B216FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM