LPM9033QVF Todos los transistores

 ..1. Size:1144K  lowpower
 lpm9033qvf.pdf

Preliminary Datasheet LPM9033 Dual channel 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9033 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable

 8.1. Size:1215K  lowpower
 lpm9031sof lpm9031qvf.pdf

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFE General Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e

 8.2. Size:1142K  lowpower
 lpm9030.pdf

Preliminary Datasheet LPM9030 N-Ch and P-Ch Fast Switching MOSFETs General Description Features 100% EAS Guaranteed The LPM9030 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which Green Device Available provide excellent RDSON and gate charge for most of Super Low Gate Charge the synchronous buck converter applications. Exc

 9.1. Size:338K  lowpower
 lpm9029c.pdf

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS trench technology and design to provide excellent V =20V, I =12A NDS ND R with low gate charge. This device is suitable R

 9.2. Size:1057K  lowpower
 lpm9042.pdf

Preliminary Datasheet LPM9042 Dual channel 40V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9042 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable

 9.3. Size:1072K  lowpower
 lpm9040a.pdf

Preliminary Datasheet LPM9040A 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9040A uses advanced trench technology to provide excellent R with low gate charge. This is Green Device Available DS(ON) an all purpose device that is suitable for use in a wide Super Low Gate Charge range of power conversion applications. Excellent CdV/

 9.4. Size:921K  lowpower
 lpm9021qvf.pdf

Preliminary Datasheet LPM9021 Single P-Channel, -12V, -6.5A, Power MOSFET General Description Features The LPM9021 is P-Channel enhancement MOSFET Trench Technology Effect Transistor. It uses advanced trench technology Super high density cell design and design to provide excellent RDS (ON) with low Excellent ON resistance for higher DC current Extremely Low Threshold