LPM9033QVF - описание и поиск аналогов

 

LPM9033QVF. Аналоги и основные параметры

Наименование производителя: LPM9033QVF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17.2 ns

Cossⓘ - Выходная емкость: 215 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: DFN8

Аналог (замена) для LPM9033QVF

- подборⓘ MOSFET транзистора по параметрам

 

LPM9033QVF даташит

 ..1. Size:1144K  lowpower
lpm9033qvf.pdfpdf_icon

LPM9033QVF

Preliminary Datasheet LPM9033 Dual channel 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9033 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable

 8.1. Size:1215K  lowpower
lpm9031sof lpm9031qvf.pdfpdf_icon

LPM9033QVF

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFE General Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e

 8.2. Size:1142K  lowpower
lpm9030.pdfpdf_icon

LPM9033QVF

Preliminary Datasheet LPM9030 N-Ch and P-Ch Fast Switching MOSFETs General Description Features 100% EAS Guaranteed The LPM9030 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which Green Device Available provide excellent RDSON and gate charge for most of Super Low Gate Charge the synchronous buck converter applications. Exc

 9.1. Size:338K  lowpower
lpm9029c.pdfpdf_icon

LPM9033QVF

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS trench technology and design to provide excellent V =20V, I =12A NDS ND R with low gate charge. This device is suitable R

Другие MOSFET... LPM4953 , LPM8205B6F , LPM8205TSF , LPM9021QVF , LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , P55NF06 , LPM9040A , LPM9042 , LPM9435 , LPM9926SOF , 2KJ7107DFN , 2KK5016 , AO6401-HF , FDC2512-HF .

History: 2SK1328 | AP4511GM-HF

 

 

 

 

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