AO6401-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO6401-HF
Código: D1*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.3 V
Carga de la puerta (Qg): 14 nC
Tiempo de subida (tr): 3.5 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia entre drenaje y fuente RDS(on): 0.047 Ohm
Paquete / Cubierta: SOT23-6
Búsqueda de reemplazo de MOSFET AO6401-HF
AO6401-HF Datasheet (PDF)
ao6401-hf ko6401-hf.pdf
SMD Type MOSFETP-Channel MOSFETAO6401-HF (KO6401-HF)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01 Pb-Free Package May be Available. The G-Suffix Denotes a+0.2-0.1Pb-Free
ao6401.pdf
AO640130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
ao6401a.pdf
AO6401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6401A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -5Awith gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V)
ao6401.pdf
SMD Type MOSFETP-Channel MOSFETAO6401 (KO6401)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Abso
ao6401a.pdf
SMD Type MOSFETP-Channel MOSFETAO6401A (KO6401A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Ab
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
