ME2306D-G Todos los transistores

 

ME2306D-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME2306D-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: SOT-23
 

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ME2306D-G Datasheet (PDF)

 ..1. Size:1457K  matsuki electric
 me2306d me2306d-g.pdf pdf_icon

ME2306D-G

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

 7.1. Size:1115K  matsuki electric
 me2306ds me2306ds-g.pdf pdf_icon

ME2306D-G

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

 8.1. Size:1599K  matsuki electric
 me2306bs me2306bs-g.pdf pdf_icon

ME2306D-G

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These

 8.2. Size:879K  matsuki electric
 me2306n me2306n-g.pdf pdf_icon

ME2306D-G

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi

MOSTRAR MÁS

Otros transistores... KO6601 , KO6604 , KRlML2402 , KRLML6401 , ME2302 , ME2306A , ME2306A-G , ME2306D , IRLZ44N , ME2307 , ME2307-G , ME2308S , ME2308S-G , ME2309 , ME2309-G , ME2320D , ME2320D-G .

History: WFU2N60B | BRCS20P03IP | KP504D | KND2803A | AON7702 | RXR035N03 | AON4413

 

 
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