ME2306D-G MOSFET Datasheet: N-Ch, 30V, 5.3A. Full specification with pinout and replacement list

ME2306D-G Specs and Replacement

Type Designator: ME2306D-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: SOT-23

ME2306D-G substitution

- MOSFET ⓘ Cross-Reference Search

ME2306D-G datasheet

..1. Size:1457K matsuki electric
me2306d me2306d-g.pdf pdf_icon

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res... See More ⇒

7.1. Size:1115K matsuki electric
me2306ds me2306ds-g.pdf pdf_icon

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state ... See More ⇒

8.1. Size:1599K matsuki electric
me2306bs me2306bs-g.pdf pdf_icon

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON) 38m @VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON) 43m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 62m @VGS=2.5V minimize on-state resistance. These ... See More ⇒

8.2. Size:879K matsuki electric
me2306n me2306n-g.pdf pdf_icon

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 49m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) mi... See More ⇒