ME2309-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME2309-G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 33.1 nS
Cossⓘ - Capacitancia de salida: 23 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.215 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de ME2309-G MOSFET
- Selecciónⓘ de transistores por parámetros
ME2309-G datasheet
..1. Size:1070K matsuki electric
me2309 me2309-g.pdf 
ME2309/ ME2309-G P-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2309 is the P-Channel logic enhancement mode power field RDS(ON) 215m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 260m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O
9.1. Size:1599K matsuki electric
me2306bs me2306bs-g.pdf
ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON) 38m @VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON) 43m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 62m @VGS=2.5V minimize on-state resistance. These
9.2. Size:1136K matsuki electric
me2305 me2305-g.pdf
ME2305/ME2305-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305 is the P-Channel logic enhancement mode power RDS(ON) 62m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 72m @VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON) 91m @VGS=-2.5V to minimize on-state resista
9.3. Size:879K matsuki electric
me2306n me2306n-g.pdf
ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 49m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) mi
9.4. Size:1077K matsuki electric
me2301a me2301a-g.pdf
ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat
9.5. Size:1127K matsuki electric
me2301 me2301-g.pdf
ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es
9.6. Size:976K matsuki electric
me2303 me2303-g.pdf
ME2303/ME2303-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2303 is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
9.7. Size:1294K matsuki electric
me2306s me2306s-g.pdf
ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON) 37m @ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON) 49m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor
9.8. Size:587K matsuki electric
me2302.pdf
ME2302(Pb-free) N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON) 85m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 115m @VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON) 135m @VGS=1.8V resistance.
9.9. Size:730K matsuki electric
me2306an me2306an-g.pdf
Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 40m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 53m @VGS=2.5V minimize on-state r
9.10. Size:1115K matsuki electric
me2306ds me2306ds-g.pdf
ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state
9.11. Size:1999K matsuki electric
me2301dc me2301dc-g.pdf
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design
9.12. Size:1540K matsuki electric
me2308s me2308s-g.pdf
ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS
9.13. Size:1321K matsuki electric
me2301gc me2301gc-g.pdf
ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m @VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m @VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=-1.8V trench technology. This high density process is especially tailored to Sup
9.14. Size:1298K matsuki electric
me2301dn me2301dn-g.pdf
ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig
9.15. Size:1039K matsuki electric
me2306as me2306as-g.pdf
ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON) 34.5m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 38m @VGS=4.5V technology.This high density process is especially tailored to RDS(ON) 50m @VGS=2.5V minimize on-state resistance.These
9.16. Size:1718K matsuki electric
me2307 me2307-g.pdf
ME2307/ME2307-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2307 is the P-Channel logic enhancement mode power field RDS(ON) 70m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 95m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O
9.17. Size:1057K matsuki electric
me2305a me2305a-g.pdf
ME2305A/ME2305A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305A is the P-Channel logic enhancement mode power RDS(ON) 67m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 77m @VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON) 96m @VGS=-2.5V to minimize on-state resistan
9.18. Size:1457K matsuki electric
me2306d me2306d-g.pdf
ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res
9.19. Size:1432K matsuki electric
me2302 me2302-g.pdf
ME2302/ME2302-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON) 85m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 115m @VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON) 130m @VGS=1.8V resistance.T
9.20. Size:1009K matsuki electric
me2301s me2301s-g.pdf
ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec
9.21. Size:1045K matsuki electric
me2306 me2306-g.pdf
ME2306/ME2306-G N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 37m @VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON) 49m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to
9.22. Size:921K matsuki electric
me2308d me2308d-g.pdf
ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON) 60m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 70m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 100m @VGS=2.5V minimize
9.23. Size:830K matsuki electric
me2308dn-g.pdf
ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8V mini
9.24. Size:1203K matsuki electric
me2306a me2306a-g.pdf
ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON) 34.5m @VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 38m @VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON) 50m @VGS=2.5V resistance. Su
9.25. Size:850K cn vbsemi
me2308s.pdf
ME2308S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G
Otros transistores... ME2306A-G
, ME2306D
, ME2306D-G
, ME2307
, ME2307-G
, ME2308S
, ME2308S-G
, ME2309
, IRFP450
, ME2320D
, ME2320D-G
, ME2323D
, ME2323D-G
, ME2325
, ME2325-G
, ME2326A
, ME2326A-G
.
History: BRCS4292SC
| SM6043CSQ
| 2N65L-TMA-T
| STB17N80K5
| SI2305CDS-T1-GE3
| 2N6788L
| BRCS70N08IP
