ME2326A Todos los transistores

 ..1. Size:1162K  matsuki electric
 me2326a me2326a-g.pdf

ME2326A/ME2326A-G N - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.5 @VGS=10V The ME2326A is the N-Channel logic enhancement mode power field RDS(ON) 5.5 @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especial

 9.1. Size:1219K  matsuki electric
 me2323d me2323d-g.pdf

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET ESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power RDS(ON) 50m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 65m @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON) 75m @VGS=-1.8

 9.2. Size:1114K  matsuki electric
 me2328 me2328-g.pdf

ME2328/ME2328-G N - Channel 105-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 270m @VGS=10V The ME2328 is the N-Channel logic enhancement mode power field RDS(ON) 340m @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especiall

 9.3. Size:1475K  matsuki electric
 me2320d me2320d-g.pdf

ME2320D/ME2320D-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320D is the N-Channel logic enhancement mode power RDS(ON)=21m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=40 m @VGS=1.8V minimize on-st

 9.4. Size:1293K  matsuki electric
 me2325s me2325s-g.pdf

ME2325S/ME2325S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 50m @VGS=-10V The ME2325S is the P-Channel logic enhancement mode power field RDS(ON) 76m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially

 9.5. Size:1144K  matsuki electric
 me2324d me2324d-g.pdf

ME2324D/ME2324D-G N-Channel 25V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2324D is the N-Channel logic enhancement mode power RDS(ON) 400m @VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 450m @VGS=2.7V trench technology. This high density process is especially tailored to ESD Protection HBM >1KV minimize

 9.6. Size:1436K  matsuki electric
 me2320ds me2320ds-g.pdf

Preliminary-ME2320DS/ME2320DS-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320DS is the N-Channel logic enhancement mode power RDS(ON)=21m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=33 m @VGS=1.8V

 9.7. Size:1062K  matsuki electric
 me2325 me2325-g.pdf

ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET GENERAL DESCRIPTION FEATURES The ME2325 is the P-Channel logic enhancement mode power field RDS(ON) 50m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 76m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

 9.8. Size:1932K  matsuki electric
 me2320d2-g me2320d2-g.pdf

ME2320D2-G/ME2320D2-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320D2 is the N-Channel logic enhancement mode power RDS(ON)=21m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=40 m @VGS=1.8V minimize on-s

 9.9. Size:1736K  cn vbsemi
 me2323d.pdf