ME2326A MOSFET Datasheet: N-Ch, 250V, 0.4A. Full specification with pinout and replacement list

ME2326A Specs and Replacement

   Type Designator: ME2326A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: SOT-23

ME2326A substitution

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ME2326A datasheet

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me2326a me2326a-g.pdf pdf_icon

ME2326A/ME2326A-G N - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.5 @VGS=10V The ME2326A is the N-Channel logic enhancement mode power field RDS(ON) 5.5 @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especial... See More ⇒

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me2323d me2323d-g.pdf pdf_icon

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET ESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power RDS(ON) 50m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 65m @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON) 75m @VGS=-1.8... See More ⇒

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me2328 me2328-g.pdf pdf_icon

ME2328/ME2328-G N - Channel 105-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 270m @VGS=10V The ME2328 is the N-Channel logic enhancement mode power field RDS(ON) 340m @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especiall... See More ⇒

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me2320d me2320d-g.pdf pdf_icon

ME2320D/ME2320D-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320D is the N-Channel logic enhancement mode power RDS(ON)=21m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=40 m @VGS=1.8V minimize on-st... See More ⇒