ME2604-G Todos los transistores

 

ME2604-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME2604-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: SOT-223

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ME2604-G Datasheet (PDF)

 ..1. Size:456K  matsuki electric
me2604 me2604-g.pdf

ME2604-G
ME2604-G

ME2604/ME2604-GN - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.7@VGS=10V The ME2604 is the N-Channel logic enhancement mode power field RDS(ON)1.9@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially t

 9.1. Size:1289K  matsuki electric
me2606 me2606-g.pdf

ME2604-G
ME2604-G

ME2606/ME2606-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2606 is the N-Channel logic enhancement mode power field RDS(ON)420m@VGS=10V effect transistors are produced using high cell density DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptional on-resistan

 9.2. Size:1226K  matsuki electric
me2602 me2602-g.pdf

ME2604-G
ME2604-G

ME2602/ME2602-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME2602 is the N-Channel logic enhancement mode power field RDS(ON)115m@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta

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