ME3205T-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME3205T-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 105 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 219 nS
Cossⓘ - Capacitancia de salida: 361 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de ME3205T-G MOSFET
ME3205T-G Datasheet (PDF)
me3205t me3205t-g.pdf

ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10VThe ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density proce
me3205h-g.pdf

ME3205H-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10V The ME3205H-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is especia
me3205f me3205f-g.pdf

ME3205F/ME3205F-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME3205F is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro
Otros transistores... ME2602-G , ME2604 , ME2604-G , ME2612 , ME2612-G , ME2N7002D , ME2N7002E , ME3205T , NCEP15T14 , ME3587 , ME35N06 , ME35N06-G , ME35N10 , ME35N10-G , ME4174 , ME4174-G , ME4411 .



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