ME4411-G Todos los transistores

 

ME4411-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME4411-G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.9 nS

Cossⓘ - Capacitancia de salida: 468 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: SOP-8

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ME4411-G datasheet

 ..1. Size:1245K  matsuki electric
 me4411 me4411-g.pdf pdf_icon

ME4411-G

ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON) 10m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 13m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.1. Size:2143K  1
 me4410ad.pdf pdf_icon

ME4411-G

ME4410AD www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 9.2. Size:667K  1
 me4410a.pdf pdf_icon

ME4411-G

ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON) 20m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored

 9.3. Size:1807K  matsuki electric
 me4413d me4413d-g.pdf pdf_icon

ME4411-G

ME4413D/ME4413D-G P-Channel Enhancement Mode Mosfet , ESD Protection GENERAL DESCRIPTION FEATURES RDS(ON) 13m @VGS=-4.5V The ME4413D is the P-Channel logic enhancement mode power RDS(ON) 17m @VGS=-2.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 26m @VGS=-1.8V trench technology. This high density process is especially tailo

MOSTRAR MÁS

Otros transistores... ME3587 , ME35N06 , ME35N06-G , ME35N10 , ME35N10-G , ME4174 , ME4174-G , ME4411 , K2611 , ME4413D , ME4413D-G , ME4435 , ME4435-G , ME4454 , ME4454-G , ME4542 , ME4542-G .

History: IRLML6402GPBF | AP3989R | KHB1D9N60D

 

 

 

 

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