ME4411-G MOSFET Datasheet: P-Ch, 30V, 12.5A. Full specification with pinout and replacement list

ME4411-G Specs and Replacement

Type Designator: ME4411-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.9 nS

Cossⓘ - Output Capacitance: 468 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP-8

ME4411-G substitution

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ME4411-G datasheet

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ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON) 10m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 13m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD... See More ⇒

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ME4410AD www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒

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ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON) 20m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored ... See More ⇒

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ME4413D/ME4413D-G P-Channel Enhancement Mode Mosfet , ESD Protection GENERAL DESCRIPTION FEATURES RDS(ON) 13m @VGS=-4.5V The ME4413D is the P-Channel logic enhancement mode power RDS(ON) 17m @VGS=-2.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 26m @VGS=-1.8V trench technology. This high density process is especially tailo... See More ⇒