ME4565A-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME4565A-G Datasheet (PDF)

..1. Size:1171K matsuki electric
me4565a me4565a-g.pdf pdf_icon

ME4565A/ ME4565A-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26.5m@VGS=10V (N-Ch) The ME4565A is the N and P-Channel logic enhancement mode RDS(ON) 45m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 44m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is es

7.1. Size:1600K matsuki electric
me4565ad4 me4565ad4-g.pdf pdf_icon

ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON) 30m@VGS=10V (N-Ch) The ME4565AD4 is the N and P-Channel logic enhancement mode RDS(ON) 58m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is

8.1. Size:611K matsuki electric
me4565.pdf pdf_icon

ME4565 N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4565 is the N- and P-Channel logic enhancement mode RDS(ON)40m@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)45m@VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON)54m@VGS=-10V (P-Ch) tailored to

Otros transistores... ME4454 , ME4454-G , ME4542 , ME4542-G , ME4548 , ME4548-G , ME4565 , ME4565A , IRF840 , ME4565AD4 , ME4565AD4-G , ME45N03T , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G .