ME4565A-G - аналоги, параметры транзистора - Справочник транзисторов

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ME4565A/ ME4565A-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26.5m @VGS=10V (N-Ch) The ME4565A is the N and P-Channel logic enhancement mode RDS(ON) 45m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 44m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is es

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ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 30m @VGS=10V (N-Ch) The ME4565AD4 is the N and P-Channel logic enhancement mode RDS(ON) 58m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is

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ME4565 N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4565 is the N- and P-Channel logic enhancement mode RDS(ON) 40m @VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m @VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON) 54m @VGS=-10V (P-Ch) tailored to

Другие MOSFET... ME4454 , ME4454-G , ME4542 , ME4542-G , ME4548 , ME4548-G , ME4565 , ME4565A , IRF840 , ME4565AD4 , ME4565AD4-G , ME45N03T , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G .