ME4946 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME4946 datasheet

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ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 41m @VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON) 52m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

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ME4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M

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ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field RDS(ON) 72m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 94m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Otros transistores... ME45P04 , ME45P04-G , ME4626 , ME4626-G , ME4825 , ME4825-G , ME4925 , ME4925-G , AO3400 , ME4946-G , ME4953-G , ME4954 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G , ME50N06T .