ME4946
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4946
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 71
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041
Ohm
Package:
SOP-8
ME4946
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4946
Datasheet (PDF)
..1. Size:1542K matsuki electric
me4946 me4946-g.pdf
ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)41m@VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON)52m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi
..2. Size:955K cn vbsemi
me4946.pdf
ME4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M
9.1. Size:1226K matsuki electric
me4947 me4947-g.pdf
ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field RDS(ON)72m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)94m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
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