ME4953-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME4953-G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de ME4953-G MOSFET
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ME4953-G datasheet
me4953 me4953-g.pdf
ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec
me4953.pdf
ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 90m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
me4954 me4954-g.pdf
ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON) 80m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely
Otros transistores... ME4626 , ME4626-G , ME4825 , ME4825-G , ME4925 , ME4925-G , ME4946 , ME4946-G , IRF3710 , ME4954 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G , ME50N75T .
History: SP2013
History: SP2013
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